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Degree: PhD, Solid State
Dissertation: Monolithic Quantum Cascade Laser Arrays for Broadband Wavelength Tuning and High Power Scaling
Publications: search papers
Graduated: June 2019
Degree: PhD, Solid State
Dissertation: Dark Current Suppression, Optical Performance Improvement and High Frequency Operation of InAs/GaSb and InAs/InAsSb Type-II Superlattices-based Infrared Devices
Publications: search papers
Graduated: December 2018
Degree: PhD, Solid State
Dissertation: Theoretical design and material growth of Type-II Antimonide-based superlattices for multi-spectral detection and imaging
Publications: search papers
Graduated: June 2016
Degree: PhD, Solid State
Dissertation: Type-II Antimonide-based Superlattices for High Performance Infrared Detectors and Imagers
Publications: search papers
Graduated: August 2015
Current Appointment: Research Assistant Professor, Northwestern University, Evanston IL
Degree: PhD, Solid State
Dissertation: Modeling, design, growth, & characterization of strain balanced quantum cascade lasers (3-11 um), grown by gas-source molecular beam epitaxy
Publications: search papers
Graduated: June 2015
Current Appointment: R&D
Degree: PhD, Solid State
Dissertation: Type-II InAs/GaSb Superlattices Photodetector for 3rd Generation Infrared Imaging
Publications: search papers
Graduated: January 2015
Current Appointment: Intel
Degree: PhD, Solid State
Dissertation: Planar Engineering for Dark Current Suppression in Type-II Superlattice Infrared Photodiodes
Publications: search papers
Graduated: April 2014
Current Appointment: Research Scientist, Purdue University
Degree: PhD, Solid State
Dissertation: Advanced Design Techniques for Si LDMOS RFIC Operation Beyond 2GHz
Graduated: June 2013
Current Appointment: Senior Manager R&D, RFIC at Infineon Technologies, San Francisco, California
Degree: PhD, Solid State
Dissertation: Quantum dot-quantum Well Infrared Photodetectors for Focal Plane Arrays
Publications: search papers
Graduated: June 2013
Current Appointment: Vice President, CETA Software Solutions
Degree: PhD, Solid State
Dissertation: Multi-spectral Infrared Photodetectors and Focal Plane Arrays based on Band-engineered Type-II InAs / GaSb Superlattices and its Variants
Publications: search papers
Graduated: June 2013
Current Appointment: Senior Engineer, Teledyne Scientific and Imaging
Degree: PhD, Solid State
Dissertation: Theoretical investigation, design and characterization of type-II InAs/GaSb material and photodetectors aimed at realization of high performance, high temperature and low cost infrared detection and imaging
Publications: search papers
Graduated: June 2012
Current Appointment: Senior Manager of Strategy and M&A at Microsoft, Chicago, Illinois
Degree: PhD, Solid State
Dissertation: High Wallplug Efficiency Quantum Cascade Lasers
Publications: search papers
Graduated: June 2011
Current Appointment: Research Assistant Professor, Northwestern University, Evanston, IL
Degree: PhD, Solid State
Dissertation: III-NITRIDE OPTOELECTRONIC DEVICES: AlGaInN Gap Engineering from Ultraviolet and Visible Wavelengths towards Terahertz Regime
Publications: search papers
Graduated: June 2011
Current Appointment: Postdoctoral Research Scientist Thomas J. Watson Research Center, Yorktown Heights, New York
Degree: PhD, Solid State
Dissertation: Photonic Crystal Distributed Feedback Quantum Cascade Lasers
Publications: search papers
Graduated: June 2011
Current Appointment: Integration Engineer at Intel Corporation, Portland, Oregon
Degree: PhD, Solid State
Dissertation: Theoretical Design and Material Growth of Type-II Antimonide-based Superlattices for Infrared Detection and Imaging
Publications: search papers
Graduated: December 2010
Current Appointment: Director's Postdoctoral Fellow at Los Alamos National Laboratory, Albuquerque, New Mexico
Degree: PhD, Solid State
Publications: search papers
Graduated: June 2010
Current Appointment: Research engineer at Hughes Research Laboratories (HRL), Santa Monica, California
Degree: PhD, Solid State
Dissertation: Minority carrier dynamics of type-II InAs/GaSb superlattice photodiodes via optical and electrical000bcharacterization
Publications: search papers
Graduated: December 2009
Current Appointment: Price to Win Lead at Raytheon Space and Airborne Systems, Los Angeles, CA
Degree: PhD, Solid State
Dissertation: AlGaN UV Optoelectronic Devices: Device Design, Fabrication and Characterization
Publications: search papers
Graduated: December 2008
Current Appointment: Raytheon Systems, Waltham, MA
Degree: PhD, Solid State
Dissertation: GasMBE Growth and Characterization of Strained Layer InP-GaInAs-AlInAs Quantum Cascade Lasers
Publications: search papers
Graduated: June 2008
Current Appointment: Program Manager for National & DoD Space / Advanced Technologies, Teledyne Scientific and Imaging, Camarillo, CA
Degree: PhD, Solid State
Dissertation: Dielectric Thin Films by Ion-Beam Sputtering Deposition for III-V based Infrared Optoelectronic Imaging
Publications: search papers
Graduated: June 2008
Current Appointment: Patent Agent at Morrison & Foerster LLP, San Francisco, California
Degree: PhD, Solid State
Dissertation: Modeling of Quantum Dot Infrared Photodetectors
Publications: search papers
Graduated: December 2007
Current Appointment: Process Engineer, Intel Corporation, Portland, Oregon
Degree: PhD, Solid State
Dissertation: Surface Passivation and performance characteristics of type-II InAs-GaSb Superlattice infrared detectors for FPAs
Publications: search papers
Graduated: December 2007
Current Appointment: FLIR Electro-Optical Components; Ventura, California
Degree: PhD, Solid State
Dissertation: UV Photodetectors, Focal Plane Arrays, and Avalanche Photodiodes
Publications: search papers
Graduated: June 2007
Current Appointment: Research Professor, Northwestern University, Evanston IL
Degree: PhD, Solid State
Dissertation: Quantum dot infrared photodetectors (QDIPs).
Publications: search papers
Graduated: June 2006
Current Appointment: Staff Scientist, Veeco Corporation, Turbodisc Division, Summerset, New Jersy
Degree: PhD, Solid State
Dissertation: Ultraviolet light emitters based on Al(x)Ga(1-x)N/AlN quantum structures.
Publications: search papers
Graduated: June 2006
Current Appointment: Sensor manager at Heptagon Advanced Micro Optics , San Francisco, California
Degree: PhD, Solid State
Dissertation: Electron beam lithography for the fabrication of nanopillars in type II InAs/GaSb superlattices for multicolor infrared focal plane arrays
Publications: search papers
Graduated: December 2005
Current Appointment: Pattent Agent, McDonnell Boehnen Hulbert & Berghoff, LLP
Degree: PhD, Solid State
Dissertation: Type II InAs/GaSb superlattice photodiodes and infrared focal plane arrays
Publications: search papers
Graduated: December 2005
Current Appointment: Technology Development Engineer at L-3 Communications , Austin, Texas
Degree: PhD, Solid State
Dissertation: Infrared focal plane array based on GaInAs/InP quantum well infrared photodetectors
Publications: search papers
Graduated: June 2004
Current Appointment: Manager, Sensor Characterization/Test/ISP at SiOnyx Inc., Portland, Oregon
Degree: PhD, Solid State
Dissertation: Quantum cascade lasers grown by gas-source molecular beam epitaxy
Publications: search papers
Graduated: June 2002
Current Appointment: Research Professor; Northwestern University, Evanston, IL
Degree: PhD, Solid State
Dissertation: Type-II InAs/GaSb superlattices for infrared detectors
Publications: search papers
Graduated: June 2001
Current Appointment: Professor, Northwestern University, Evanston, IL
Degree: PhD, Solid State
Dissertation: GaInAs/InP quantum well infrared photodetectors on Si substrate for low-cost focal plane arrays
Publications: search papers
Graduated: June 2001
Current Appointment: Senior Engineer at Agiltron, Woburn, MA
Degree: PhD, Solid State
Dissertation: Low-pressure metal organic chemical vapor deposition growth of InAsSbP based materials for infrared laser applications
Publications: search papers
Graduated: June 2001
Current Appointment: Panduit Corporation, Orland Park, IL
Degree: PhD, Solid State
Dissertation: Investigation of InAsSb-based uncooled infrared photodiodes for the proximity fuze application
Publications: search papers
Graduated: June 2001
Current Appointment: Senior Manager at Protiviti, Chicago
Degree: PhD, Solid State
Dissertation: Aluminum gallium nitride ultraviolet photodetectors : device design, fabrication and characterization
Publications: search papers
Graduated: June 2000
Current Appointment: senior director of the Semiconductor Technology Lab for General Electric, Schenectady, NY
Degree: PhD, Solid State
Dissertation: III-nitride semiconductor films and device structures grown by low pressure MOCVD
Publications: search papers
Graduated: June 2000
Current Appointment: Professor, Alabama University
Degree: PhD, Solid State
Dissertation: Exploration of Bi and Tl containing III-V materials for uncooled long-wavelength infrared photodetector applications
Publications: search papers
Graduated: June 2000
Current Appointment: Ajou University, SOUTH KOREA
Degree: PhD, Solid State
Dissertation: MOCVD growth and characterization of epitaxial quantum dots for optoelectronic devices
Publications: search papers
Graduated: December 1999
Current Appointment: Professor, Alabama University
Degree: PhD, Solid State
Dissertation: MOCVD growth and characterization of InAsSb/InAs(SbP) on InAs substrate for the mid-infrared laser applications
Graduated: June 1999
Current Appointment: Sienna Technologies, Inc., Woodinville, WA
Degree: PhD, Solid State
Dissertation: Investigation of InAsSb material system for uncooled long-wavelength infrared photodetector applications
Publications: search papers
Graduated: June 1999
Current Appointment: Samsung Electronics Co., SOUTH KOREA
Degree: PhD, Solid State
Dissertation: Sb-based materials for infrared photodetectors : growth, characterization, fabrication, and analysis
Publications: search papers
Graduated: December 1998
Current Appointment: Patent Agent for McAndrews Held & Malloy, Ltd., Chicago, IL
Degree: PhD, Solid State
Dissertation: Investigation of optical properties of III-nitrides
Publications: search papers
Graduated: December 1998
Current Appointment: Onetta, Sunnyvale, CA
Degree: PhD, Solid State
Dissertation: Modeling and analysis of Al-free near- and mid-infrared semiconductor lasers
Graduated: June 1998
Current Appointment: Tri-Quint Semiconductor, Inc., Breinigsville, PA
Degree: PhD, Solid State
Dissertation: Exploration of LP-MOCVD grown III-nitrides on various substrates
Publications: search papers
Graduated: June 1998
Current Appointment: Cree Research, Inc., Durham, NC
Degree: PhD, Solid State
Dissertation: Ga(x)In(1-x)As(y)P(1-y)-based n-type long wavelength quantum well infrared photodetectors: Growth, characterization, and fabrication
Publications: search papers
Graduated: June 1998
Current Appointment: Consulting Engineer (Physicist T6) at Northrop Grumman Electronic Systems, Rolling Meadows, IL
Degree: PhD, Solid State
Dissertation: Radiative properties of high-power 808 nm aluminum-free laser diodes
Publications: search papers
Graduated: June 1997
Current Appointment: Director of R&D at Emcore Corporation's EMD division, Somerset, NJ
Degree: PhD, Solid State
Dissertation: Fabrication of high power aluminum - free 0.9 γm to 1.0 γm InGaAsP/InGaP/GaAs lasers for optical pumping
Publications: search papers
Graduated: June 1997
Current Appointment: Emcore Corporation, US
Degree: PhD, Solid State
Dissertation: Quaternary GA(1-X)IN(X)AS(Y)P(1-Y) P-type quantum well intersubband photodetectors
Publications: search papers
Graduated: December 1996
Current Appointment: Fermi National Laboratory, Batavia, IL
Degree: PhD, Solid State
Dissertation: Growth and characterization of InSb and InTISb narrow-bandgap materials for infrared detector applications.
Publications: search papers
Graduated: December 1995
Current Appointment: LG Electronics Institute of Technology, SOUTH KOREA
Degree: PhD, Solid State
Dissertation: MOCVD growth and characterization of Ga(x)In(1-x)As(y)P(1-y) on GaAs substrate for optoelectronic device applications
Graduated: June 1995
Current Appointment: Vice President -- Sanan Electronics Co., Ltd. CHINA
Degree: PhD, Solid State
Dissertation: MOCVD growth and characterization of III-nitride for optoelectronic device applications
Publications: search papers
Graduated: December 1994
Current Appointment: Deputy director of Optoelectronics Device and System Application Division of Electronics & Optoelectronics Research Laboratories (EOL) under the government-backed Industrial Technology Research Institute (ITRI)
Degree: PhD, Solid State
Dissertation: Advanced modeling concepts and material considerations for III-V heterostructure electron devices on GaAs substrates
Publications: search papers
Graduated: June 1994
Current Appointment: Professor at Middle East Technical University, TURKEY
Degree: PhD, Solid State
Dissertation: nGaAsP / InP 1.3 μm double heterostructure laser grown on Si substrate by metalorganic vapor phase epitaxy
Publications: search papers
Graduated: June 1994
Current Appointment: Program Manager - New Product Development at NeoPhotonics de C.V.
Center for Quantum Devices
ECE Department, McCormick School of Engineering, Northwestern University
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu
© 2020 Center for Quantum Devices, Northwestern University Disclaimer

So Installed cp210x drivers but still unable to see any UART output in MobaXterm thru serial COM1 port. I tried with both serial enum driver and the default option. Rebooting between each attempt. I do not see any new COM device listed when pwoering up the Zedboard. Standalone USB Driver (6.3MB EXE) (USB driver supports Windows XP to Windows 7; Windows 2000 not supported) Windows 8 (Supports both 32- and 64-bit operating systems) Micro OWL 2 series optical power meters: WaveTester series optical power meters: OWLTrek series OTDRs: OWLView for OTDR Software (recommended) (USB driver supports Windows XP to Windows 8; Windows 2000 not.

At present, the growth in information technology has increased using the current telecommunication systems. Mostly, OFC (optical fiber communication) plays an essential role in the telecommunication system development with a high speed as well as quality. Nowadays, the applications of optical fibers mainly involve in telecommunication systems and also in the Internet & LAN (local area networks) to attain high signaling rates. The optical fiber communication module mainly includes transmitter module like PS-FO-DT as well as receiver module like PS-FO-DR. The communication of fiber-optic digital data transmission & reception can be done using plastic fiber cable. This article discusses an overview of optical transmitters and receivers, its specifications.

What are Optical Transmitters and Receivers?

The optical fiber communication system mainly includes a transmitter and receiver where the transmitter is located on one ending of a fiber cable & a receiver is located on the other side of the cable. Most of the systems utilize a transceiver which means a module which includes transmitter and receiver. The input of the transmitter is an electrical signal and it converts into an optical signal from LED or laser diode.


The light signal from the transmitter end is connected to the fiber cable using a connector & is broadcasted through the cable. The light signal from the fiber end can be connected to a receiver wherever a detector changes from the light to an electrical signal then it will be conditioned appropriately to use by the receiving equipment.

Transmitter

In the FOC system, the light source like an LED or laser diode is used as a transmitter. The main function of a light source like LED / Laser is to change an electrical signal into the light signal. These light sources are small semiconductor devices which efficiently converts electrical signal to light signal. These light sources require connections of power supply and modulation circuitry. All these are generally connected within one IC package. The best example of the transmitter LED is HFBR 1251. This kind of LEDs requires an external driver circuit. Here we IC 75451can be used for driving the light source.

Transmitter Specifications

  • Type of LED is DC coupled
  • Interface connectors are 2mm socket
  • The wavelength of source is 660nm
  • Supply current is a maximum of 100 mA
  • A serial port is Max232 IC Driver
  • Type of input signal is digital data
  • The LED driver is on board IC Driver
  • The interface of LED is self-locking Cap
  • Highest input voltage is +5V
  • Data rate speed is 1 Mbps
  • Supply Voltage is +15V DC

Sources of Fiber Optic Transmitter

The fiber optic transmitter uses sources based on several criteria’s like diodes, DFB laser, FP lasers, VCSEL, etc. The main function of these sources is to changes from an electrical signal to an optical signal. All these are semiconductor devices.

The LEDs & VCSELs are made-up on semiconductor wafers to produce light from the outside of the chip, whereas f-p laser emits from the surface of the chip as of a laser cavity formed within the center of the chip.


The outputs of LEDs have low-power outputs compare with lasers. The bandwidth of LEDs is less compare with lasers Due to the fabrication methods of LEDs & VCSELs, they are inexpensive to build. But lasers are expensive due to the laser cavity within the device.

Specifications of Different Fiber Optic Sources

The different fiber optic sources are LED, Fabry-Perot Laser, DFB Laser, and VCSEL

For LED

  • Wavelength in nm is 850, 1300
  • Power into Fiber in dBm is -30 to -10
  • Bandwidth is <250 MHz
  • Type of Fiber is MM

For Fabry-Perot Laser

  • Wavelength in nm is 850, 1310 (1280-1330), 1550 (1480-1650)
  • Power into Fiber in dBm is 0 to +10
  • Bandwidth is >10 GHz
  • Types of Fibers are MM, SM
Drivers Optical Wavelength Laboratories Port Devices

For DFB Laser

  • Wavelength in nm is 1550 (1480-1650)
  • Power into Fiber in dBm is 0 to +25
  • Bandwidth is >10 GHz
  • Type of Fiber is SM

Drivers Optical Wavelength Laboratories Port Devices Online

For VCSEL

  • Wavelength in nm is 850
  • Power into Fiber in dBm is -10 to 0
  • Bandwidth is >10 GHz
  • Type of Fiber is MM

Optical Fiber

Drivers Optical Wavelength Laboratories Port Devices Inc

An optical fiber is the transmission medium within FOC systems. Here, optical fiber is the crystal clear and stretchy filament which transmits the light from a transmitter end to a receiver end. When the optical signal enters at the transmitter end of fiber then optical communication system transmits to the end of the receiver using the optical fiber.

Receiver

In the FOC system, a photodetector can be used as a receiver. The main function of the receiver is to change an optical data signal back to an electrical signal. This is a semiconductor photodiode in photodetector in current FOC system. This is a small device generally fabricated jointly with electrical circuitry to form an IC package to offer connections like power supply & signal amplification. The best example of the receiver photodetector is HFBR 2521. This kind of photodiode includes driver circuit so it doesn’t require an external driver circuit.

Drivers Optical Wavelength Laboratories Port Devices

Receiver Specifications

  • Type of photodiode is DC coupled
  • The interface connector is 2mm socket
  • The wavelength of diode ranges from 660nm to 850nm
  • The maximum current supply is 50mA
  • The speed of data rate is 5 Mbps
  • Index of fiber cladding is 1.402
  • The interface of the photodiode is the self-locking cap
  • The optical cable is plastic fiber multimode
  • Receiver driver is internal diode driver
  • The serial port is Max232 IC Driver

Thus, this is all about optical transmitters and receivers. The fiber optic source used in the transmitter is LED otherwise laser source & electronics for signal conditioning is mainly used for adding a signal into fiber. The receiver in fiber optic captures the light signal from a FOC, and decodes the binary information and transmits it into an electrical signal.

Drivers Optical Wavelength Laboratories Port Devices List

The data can be transmitted from an LED source to a transmitter through an electrical signal. After that, it takes the binary information & transmits it in the direction of a light signal. The light signal can be transmitted by means of FOC until it arrives at the receiver. Then the receiver receives a light signal to decode it back to an electrical signal to allow the binary information to be studied by the operator. A transceiver of FOC is one kind of device which unites both the transmitter & receiver functions.

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